jun . 2015 revision 0.0 magnachip semiconductor ltd . 1 mbq40t120f e s 1200v fieldstop trench igbt datasheet absolute maximum ratings characteristics symbol rating unit collector - e mitter v oltage v ces 1200 v gate - e mitter v oltage v g e s 2 0 v c ollector c urrent t c =25 c i c 80 a t c =100 c 40 a pulsed c ollector cu rren t, p ulse t ime l imited by t jmax i c m 160 a diode f orward c urrent @ t c = 100 c i f 40 a diode pulsed c urrent , pulse time limited by t jmax i fm 160 a p ower d issipation t c =25 c p d 357 w t c =100 c 142 w short c ircuit w ithstand t ime v ce = 600v, v ge = 15v, t c = 1 50 c allowed number of short circuit < 1000 time between short circuits 1.0s tsc 10 s operating junction and s torage t emperature r ange t j , t stg - 55~150 c thermal characteristics characteristics symbol rating unit thermal r esistance j unction - to - a mbient r ja 4 0 c /w thermal r esistance j unction - to - c ase for igbt r jc 0.3 5 thermal r esistance j unction - to - c ase for diode r jc 0. 8 mbq40t120f e s high speed field stop trench igbt features ? ? ce(sat) = 2.0v @ i c = 40a ? ? rr = 100ns (typ.) ? ? ? applications ? ? ? general description th is igbt is produced using advan ced magnachips ce(sat) , high switching performance and excellent quality. this device is for pfc, ups & inverter applications. to - 2 47 e c g
jun . 2015 revision 0.0 magnachip semiconductor ltd . 2 mbq40t120f e s 1200v fieldstop trench igbt datasheet ordering information p art number marking temp. range package packing rohs status mbq40t120f e sth 40t120f e s - 55~150 c to - 247 tube pb free electrical characteristics (t c =25 o c unless otherwise specified ) characteristics symbol test condition min typ max unit static characteristics collector - e mitter b reakdown v oltage bv ces i c = 1m a, v g e = 0v 120 0 - - v gate - emitter t hre shold v oltage v g e (th) v ce = v g e , i c = 1m a 4 . 5 5.5 6. 5 v zero gate voltage collector current i ces v ce = 1200v , v g e = 0v - - 1 m a gate - e mitter l eakage c urrent i g e s v ge = 20 v , v ce = 0v - - 2 5 0 na collector - e mitter s aturation v oltage v ce(sat) i c = 40 a, v g e = 15v, t c = 25c 2.0 2 . 4 v i c = 40 a, v g e = 15v, t c = 150 c 2. 45 dynamic and switching characteristics total g ate c harge q g v ce = 6 00v, i c = 40 a, v ge = 1 5 v - 341 nc gate - e mitter c harge q ge - 52 gate - c ollector c harge q g c - 126 input c apacitance c i e s v ce = 30 v, v ge = 0v, f = 1 mhz - 6030 - pf reverse t ransfer c apacitance c r e s - 107 - output c apacitance c o e s - 20 6 - turn - o n d elay t ime t d(on) v g e = 1 5 v, v cc = 60 0v, i c = 40 a, r g = 10 , inductive load, t c = 25 c 65 n s rise t ime t r 55 turn - o ff d elay t ime t d(off) 308 fall t ime t f 40 turn - on switching energy e on 1.96 mj turn - off switching energy e off 0.54 total switching energy e ts 2.50 turn - o n d elay t ime t d(on) v g e = 1 5 v, v cc = 60 0v, i c = 40 a, r g = 10 , inductive load, t c = 150 c 70 n s rise t ime t r 62 turn - o ff d elay t ime t d(off) 325 fall t ime t f 62 turn - on switching energy e on 2.35 mj turn - off switching energy e off 1.61 total switching energy e ts 3.96 diode characteristics (t c =25 o c unless otherwise specified ) f orward v oltage v f i f = 40a, t c = 25 c - 2. 4 3.0 v i f = 40a, t c = 1 50 c - 2.4 5 r everse r ecovery t ime t rr i f = 40a, di/dt = 2 00a/ s , t c = 25 c - 1 00 - n s reverse r ecovery c urrent i rr - 7 - a reverse recovery c harge q rr - 350 - nc r everse r ecovery t ime t rr i f = 40a, di/dt = 2 00a/ s, t c = 1 50 c - 1 80 - n s r everse r ecovery c urrent i rr - 10 - a r everse r ecovery c harge q rr - 900 - nc
jun . 2015 revision 0.0 magnachip semiconductor ltd . 3 mbq40t120f e s 1200v fieldstop trench igbt datasheet fig.1 typical output characteristics fig.2 typical collector - emitter saturation voltage fig.3 typical transfer characteristics fig.4 typical collector - emitter saturation voltage at case temperature fig.5 typical short circuit collector current fig.6 typical short circuit withstand time 0 1 2 3 4 5 0 30 60 90 120 150 common emitter v ge = 15v t c = 25c t c = 150c collector current, i c [a] collector-emitter voltage, v ce [v] 0 4 8 12 0 20 40 60 80 100 120 v ce = 20v t c = 25c t c = 150c collector current, i c [a] gate-emitter voltage v ge [v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 common emitter v ge = 15v 20a 40a 80a collector-emitter voltage, v ce [v] case temperature, t c [c] 12 14 16 18 100 150 200 250 300 t c =25 t c = 150 short circuit collector current, i c(sc) [a] gate-emitter voltage, v ge [v] 12 13 14 15 16 17 18 0 5 10 15 20 25 30 t c = 25c t c = 150c short circuit withstand time, t sc [? ] gate-emitter voltage, v ge [v] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 t c = 25c 10.0v 15v v ge = 8v 12.0v 20v collector current, i c [a] collector-emitter voltage v ce [v]
jun . 2015 revision 0.0 magnachip semiconductor ltd . 4 mbq40t120f e s 1200v fieldstop trench igbt datasheet fig. 7 typical capacitance fig. 8 typical gate charge fig. 9 switching loss - gate resistance fig. 10 turn on characteristics - gate resistance fig. 11 turn off characteristics - gate resistance fig.1 2 switching loss - case temperature 0 10 20 30 40 50 60 70 10 100 td(on) tr common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25c t c = 150c switching time [ns] gate resistance, r g [ohm] 0 10 20 30 40 50 60 70 10 100 1000 td(off) tf common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25c t c = 150c switching time [ns] gate resistance, r g [ohm] 0 10 20 30 40 50 60 70 1 10 eoff eon common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25c t c = 150c switching loss [mj] gate resistance, r g [ohm] 0 5 10 15 20 25 30 0 2000 4000 6000 8000 10000 cies cres coes v ge = 0v f = 1mhz t c =25c capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 v cc = 200v v cc = 600v gate-emitter voltage, v ge , [v] total gate charge, q g [nc] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 eoff eon common emitter v cc = 600v, v ge = 15v i c = 40a r g = 10ohm switching loss [mj] case temperature, t c [c]
jun . 2015 revision 0.0 magnachip semiconductor ltd . 5 mbq40t120f e s 1200v fieldstop trench igbt datasheet fig.1 3 switching loss - collector current fig.1 4 typical turn on - collector current fig.1 5 typical turn off - collector current fig.1 6 diode forward characteristics fig.1 7 typical turn off - collector current fig.1 8 forward bias safe operating area 20 30 40 50 60 10 100 td(on) tr common emitter v ge = 15v r g = 10ohm t c = 25c t c = 150c switching time [ns] collector current, i c [a] 20 30 40 50 60 100 t c = 25c t c = 150c di/dt=200a/us di/dt=100a/us di/dt=100a/us di/dt=200a/us reverse recovery time, t rr [ns] forward current, i f [a] 0 1 2 3 4 0.1 1 10 100 t c = 25c t c = 150c forward current, i f [a] forward voltage, v f [v] 20 30 40 50 60 10 100 td(off) tf common emitter v ge = 15v r g = 10ohm t c = 25c t c = 150c switching time [ns] collector current, i c [a] 1 10 100 1000 0.1 1 10 100 200us 100us dc 50us 500us collector current,i c , [a] collector-emitter voltage,v ce [v] 20 30 40 50 60 1 2 3 4 5 eoff eon common emitter v cc = 600v v ge = 15v r g = 10ohm t c = 150c switching loss [mj] collector current, i c [a]
jun . 2015 revision 0.0 magnachip semiconductor ltd . 6 mbq40t120f e s 1200v fieldstop trench igbt datasheet fig. 19 reverse bias safe operating area fig. 20 switching frequency C collector current fig.2 1 case temperature C collector current fig.2 2 igbt transient thermal impedance 10 -6 1x10 -5 1x10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 rectangular pulse width [sec] notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ? jc * r ? jc (t) + t c d=0.9 0.02 0.5 0.05 0.1 0.01 thermal response [z th-jc ] 1 10 100 1000 1 10 100 v ge = 15v, t c = 150 collector current,i c , [a] collector-emitter voltage,v ce [v] 1 10 100 1000 0 50 100 150 switching frequency [khz] triangle rectangle i c collector current [a] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 collector current, i c [a] case temperature, t c [c]
jun . 2015 revision 0.0 magnachip semiconductor ltd . 7 mbq40t120f e s 1200v fieldstop trench igbt datasheet physical dimension to - 247 d imensions are in millimeters, unless otherwise specified dimension min(mm) max(mm) a 4.70 5.31 a1 2.20 2.60 a2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 d 20.30 21.46 d1 13.08 - e 15.45 16.26 e1 13.06 14.02 e2 4.32 5.49 e 5.45bsc l 19.81 20.57 l1 - 4.50 p 3.50 3.70 q 5.38 6.20 s 6.15bsc e d q l l1 e b b2 b1 a a1 c d1 e1 p s a2 e2
jun . 2015 revision 0.0 magnachip semiconductor ltd . 8 mbq40t120f e s 1200v fieldstop trench igbt datasheet disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
|
